BCM857BV,315
NXP USA Inc.
Deutsch
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Kollektor-Emitter-Durchbruch (max) | 45V |
VCE Sättigung (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
Transistor-Typ | 2 PNP (Dual) Matched Pair |
Supplier Device-Gehäuse | SOT-666 |
Serie | - |
Leistung - max | 300mW |
Verpackung / Gehäuse | SOT-563, SOT-666 |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
---|---|
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Frequenz - Übergang | 175MHz |
DC Stromgewinn (HFE) (Min) @ Ic, VCE | 200 @ 2mA, 5V |
Strom - Collector Cutoff (Max) | 15nA (ICBO) |
Strom - Kollektor (Ic) (max) | 100mA |
Grundproduktnummer | BCM857 |
BROADCOM BGA
MICROWAVE RECIEVER ON A CHIP FOR
MICROWAVE RECIEVER ON A CHIP FOR
TRANS 2PNP 45V 0.1A 6TSOP
TRANS 2PNP 45V 0.1A 6TSOP
TRANS 2PNP 45V 0.1A SOT563
45 V, 100MA PNP/PNP MATCHED DOUB
BCM857BSHF
BCM857BSHX
TRANS 2PNP 45V 0.1A DFN1010B-6
TRANS 2PNP 45V 0.1A SOT666
NEXPERIA/ New
TRANS 2PNP 45V 0.1A SOT666
TRANS 2PNP 45V 0.1A SOT666
PNP/PNP MATCHED DOUBLE TRANSISTO
BCM857BSH-QX
BCM857DS NXP
NEXPERIA/ New
TRANS 2NPN 45V 0.1A 6TSSOP
BCM857BSH-QF
2024/06/3
2024/01/24
2024/06/4
2024/10/23
BCM857BV,315NXP USA Inc. |
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